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1

Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

Nagase, M., Akimoto, R., Simoyama, T., Guangwei, C., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2008

Language:

english

File:

PDF, 109 KB

english, 2008

2

Bandgap Control for Intersubband Transition in InGaAs/AlAsSb Coupled Double Quantum Wells

Feng, Jijun, Akimoto, Ryoichi, Gozu, Shin-ichiro, Mozume, Teruo, Hasama, Toshifumi, Ishikawa, Hiroshi

Journal:

IEEE Photonics Technology Letters

Year:

2013

Language:

english

File:

PDF, 1.33 MB

english, 2013

3

Effects of shutter transients in molecular beam epitaxy

Shin-ichiro Gozu, Teruo Mozume, Haruhiko Kuwatsuka…

Journal:

Nanoscale Research Letters

Year:

2012

Language:

english

File:

PDF, 246 KB

english, 2012

4

1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

Akiyama, T., Georgiev, N., Mozume, T., Yoshida, H., Gopal, A.V., Wada, O.

Journal:

IEEE Photonics Technology Letters

Year:

2002

Language:

english

File:

PDF, 182 KB

english, 2002

5

Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure

Neogi, A., Mozume, T., Yoshida, H., Wada, O.

Journal:

IEEE Photonics Technology Letters

Year:

1999

Language:

english

File:

PDF, 48 KB

english, 1999

6

All-Optical Cross-Phase Modulation Generation by Ion Implantation in III–V Quantum Wells

Guangwei Cong, Akimoto, R., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

7

Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells

Simoyama, T., Sekiguchi, S., Yoshida, H., Jun-ichi Kasai, Mozume, T., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2007

Language:

english

File:

PDF, 149 KB

english, 2007

8

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

Simoyama, T., Yoshida, H., Jun-ichi Kasai, Mozume, T., Gopal, A.V., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2003

Language:

english

File:

PDF, 200 KB

english, 2003

9

Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

T Mozume, N Georgiev, H Yoshida

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

10

Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well

A Neogi, H Yoshida, T Mozume, O Wada

Journal:

Optics Communications

Year:

1999

Language:

english

File:

PDF, 290 KB

english, 1999

11

[IEEE 2009 IEEE/LEOS Winter Topicals Meeting Series (WTM 2009) - Innsbruck, Austria (2009.01.12-2009.01.14)] 2009 IEEE/LEOS Winter Topicals Meeting Series - All-optical switch based on intersubband transition in quantum wells

Akimoto, R., Cong, GW., Nagase, M., Mozume, T., Lim, CG., Gozu, S., Akita, K., Hasama, T., Ishikawa, H.

Year:

2009

Language:

english

File:

PDF, 396 KB

english, 2009

12

[IEEE 2005 Optical Fiber Communications Conference Technical Digest - Anaheim, CA, USA (2005.03.6-2005.03.11)] OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005. - Waveguide design of InGaAs/AlAs/AlAsSb inter-subband transition optical switch

Sekiguchi, S., Simoyama, T., Yoshida, H., Kasai, J., Mozume, T., Ishikawa, H.

Year:

2005

Language:

english

File:

PDF, 482 KB

english, 2005

13

Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

J. Kasai, T. Mozume

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 280 KB

english, 2005

14

InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm

Gozu, Shin-ichiro, Mozume, Teruo, Kuwatsuka, Haruhiko, Ishikawa, Hiroshi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

15

[IEEE 2006 International Conference on Indium Phosphide and Related Materials - Princeton, NJ (May 7, 2006)] 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Ultrafast All-Optical Switches using Intersubband Transition in Quantum Wells

Ishikawa, H., Simoyama, T., Nagase, M., Mozume, T., Akimoto, R., Li, B., Akita, K., Hasama, T.

Year:

2006

Language:

english

File:

PDF, 605 KB

english, 2006

16

[IEEE Seventh International Conference on Indium Phosphide and Related Materials - Hokkaido, Japan (9-13 May 1995)] Seventh International Conference on Indium Phosphide and Related Materials - Novel self-aligned sub-micron emitter InP/InGaAs HBT's using T-shaped emitter electrode

Masuda, H., Tanoue, T., Oka, T., Terano, A., Pierce, M.W., Hosomi, K., Ouchi, K., Mozume, T.

Year:

1995

Language:

english

File:

PDF, 538 KB

english, 1995

17

Cross Phase Modulation Efficiency Enhancement in In 0.8 Ga 0.2 As/Al 0.5 Ga 0.5 As/AlAs 0.56 Sb 0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength

Gozu, Shin-ichiro, Mozume, Teruo, Akimoto, Ryoichi, Akita, Kazumichi, Cong, Guangwei, Ishikawa, Hiroshi

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 148 KB

english, 2009

18

[IEEE Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 - San Francisco, CA, USA (2000.5.7-2000.5.12)] Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088) - Ultrafast all-optical switching using near-infrared intersubband transitions in InGaAs/AlAsSb quantum well structures

Yoshid, H., Mozume, T., Neogi, A., Georgiev, N., Akiyama, T., Wada, O.

Year:

2000

File:

PDF, 104 KB

2000

19

Characterization of Interfacial Structure of InGaAs/InP Short Period Superlattices by Raman Scattering and High Resolution X-Ray Diffraction

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 423 KB

english, 1993

20

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Ultrafast Phenomena in Semiconductors III - Novel technique for all-optical modulation in asymmetric quantum wells

Neogi, Arup, Yoshida, Haruhiko, Mozume, Teruo, Wada, Osamu, Kawaguchi, Hitoshi, Tsen, Kong-Thon F.

Year:

1999

Language:

english

File:

PDF, 409 KB

english, 1999

21

SPIE Proceedings [SPIE Integrated Optoelectronics Devices - San Jose, CA (Saturday 25 January 2003)] Ultrafast Phenomena in Semiconductors VII - Realization of ultrafast and low power all-optical switches using intersubband transitions in a novel InGaAs/AlAs/AlAsSb quantum well structure

Mozume, Teruo, Kasai, Jun-ichi, Georgiev, Nikolai, Simoyama, Takasi, Gopal, Achanta V., Yoshida, Haruhiko, Tsen, Kong-Thon F., Song, Jin-Joo, Jiang, Hongxing

Year:

2003

Language:

english

File:

PDF, 667 KB

english, 2003

22

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Picoseconds carrier spin relaxation in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells

Ishikawa, Tomoki, Gozu, Shin-ichiro, Mozume, Teruo, Asakawa, Masaki, Ohki, Shunsuke, Tackeuchi, Atsushi

Year:

2016

Language:

english

File:

PDF, 20 KB

english, 2016

23

Ultrafast All-Optical Refractive Index Modulation in Intersubband Transition Switch Using InGaAs/AlAs/AlAsSb Quantum Well

Ishikawa, Hiroshi, Tsuchida, Hidemi, Abedin, Kazi Sarwar, Simoyama, Takasi, Mozume, Teruo, Nagase, Masanori, Akimoto, Ryoichi, Miyazaki, Tetsuya, Hasama, Toshifumi

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 159 KB

english, 2007

24

Monolithically Integrated Ultrafast All-Optical Switch consisting of Intersubband Optical Nonlinear Waveguide and Michelson Interferometer

R. Akimoto, S. Gozu, T. Mozume, H. Ishikawa

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

25

Pharmacokinetic and therapeutic efficacy of intrapulmonary administration of zoledronate for the prevention of bone destruction in rheumatoid arthritis

Katsumi, Hidemasa, Mozume, Takunori, Yanagi, Shin-ichiro, Hasei, Tomohiro, Watanabe, Tetsushi, Sakane, Toshiyasu, Yamamoto, Akira

Journal:

Journal of Drug Targeting

Year:

2015

Language:

english

File:

PDF, 759 KB

english, 2015

26

Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices

Gozu, Shin-ichiro, Mozume, Teruo

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 492 KB

english, 2015

27

Efficient All-Optical Interband Light Modulation by Ultrafast Manipulation of Intersubband Transitions in an Asymmetric Quantum Well *

Neogi, Arup, Yoshida, Haruhiko, Mozume, Teruo, Wada, Osamu

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 423 KB

english, 1999

28

[IEEE Technical Digest. CLEO/Pacific Rim '99 - Seoul, South Korea (30 Aug.-3 Sept. 1999)] Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464) - All-optical switching using ultrafast intersubband transitions in InGaAs/AlAsSb coupled triple quantum well structures

Yoshida, H., Mozume, T., Neogi, A., Wada, O.

Year:

1999

Language:

english

File:

PDF, 148 KB

english, 1999

29

Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

T. Mozume, J. Kasai, M. Nagase, T. Simoyama, H. Ishikawa

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 150 KB

english, 2007

30

Interface control of InGaAs/AlAsSb heterostructures

T Mozume, N Georgiev

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 923 KB

english, 2000

31

[IEEE Conference Digest 2000 Conference on Lasers and Electro-Optics Europe - Nice, France (10-15 Sept 2000)] Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) - Picosecond all-optical switching using 1.55 μm intersubband transition in an InGaAs/AlAs/AlAsSb coupled double quantum well (C-DQW) structure

Yoshida, H., Mozume, T., Neogi, A., Georgiev, N., Akiyama, T., Wada, O.

Year:

2000

Language:

english

File:

PDF, 79 KB

english, 2000

32

[IEEE 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) - Munich, Germany (22-27 June 2003)] 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) - A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions

Mozume, T., Kasai, J., Simoyama, T., Gopal, A.V., Yoshida, H.

Year:

2003

Language:

english

File:

PDF, 64 KB

english, 2003

33

Characterization of interfacial structure of InGaAs/InP short-period superlattices by high resolution x-ray diffraction and Raman scattering

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 928 KB

english, 1995

34

Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching

Yoshida, H., Mozume, T., Nishimura, T., Wada, O.

Journal:

Electronics Letters

Year:

1998

Language:

english

File:

PDF, 118 KB

english, 1998

35

Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2008

Language:

english

File:

PDF, 255 KB

english, 2008

36

Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wells

Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2010

Language:

english

File:

PDF, 682 KB

english, 2010

37

Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells

T. Mozume, S. Gozu

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 424 KB

english, 2012

38

Results of Malleostapediopexy

Yuge, Kurata, Daito, Kanehiko, Nakamura, Ken, Nakamura, Kenichi, Murakami, Mitsunobu, Hattori, Yasuo, Murakami, Tadanari, Mozume, Seiji

Journal:

Auris Nasus Larynx

Year:

1983

Language:

english

File:

PDF, 425 KB

english, 1983

39

[IEEE 2009 International Conference on Photonics in Switching (PS) - Pisa, Italy (2009.09.15-2009.09.19)] 2009 International Conference on Photonics in Switching - Observation of four-wave mixing signals from an AlAsSb/InGaAs ISBT (Inter Sub-Band Transition) optical waveguide

Kuwatsuka, H., Akimoto, R., Mozume, T., Gozu, S., Akita, K., Ogasawara, T., Ishikawa, H.

Year:

2009

Language:

english

File:

PDF, 100 KB

english, 2009

40

[IEEE LEOS 2002. 2002 IEEE/LEOS Annual Meeting Conference Proceedings. 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, UK (10-14 Nov. 2002)] The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Ultrafast all-optical switching using near-infrared intersubband transitions in quantum wells

Yoshida, H., Gopal, A.V., Simoyama, T., Mozume, T., Ishikawa, H., Asakawa, K.

Year:

2002

Language:

english

File:

PDF, 149 KB

english, 2002

41

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Optical and structural properties of In[sub 0.64]Ga[sub 0.36]As∕Al[sub x]Ga[sub 1−x]As(x≤0.2)∕AlAsSb coupled double quantum wells

Gozu, Shin-ichiro, Mozume, Teruo, Ishikawa, Hiroshi

Year:

2013

Language:

english

File:

PDF, 284 KB

english, 2013

42

Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP

N. Georgiev, T. Mozume

Year:

2001

Language:

english

File:

PDF, 427 KB

english, 2001

43

Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs/InP heterostructures

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 508 KB

english, 1995

44

Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy

Year:

2004

Language:

english

File:

PDF, 342 KB

english, 2004

45

Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

Cong, G. W., Akimoto, R., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 698 KB

english, 2010

46

All-optical demultiplexing of 160–10 Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well

Akimoto, R., Simoyama, T., Tsuchida, H., Namiki, S., Lim, C. G., Nagase, M., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 391 KB

english, 2007

47

[IEEE Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan (15-19 July 2001)] Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557) - Ultrafast (∼1 THz) 1.55 μm all-optical switch using intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells

Akiyama, T., Georgiev, N., Mozume, T., Yoshida, H., Gopal, A.V., Wada, O.

Year:

2001

Language:

english

File:

PDF, 126 KB

english, 2001

48

AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors - Seoul, (Korea) (25–30 July 2010)] - Surface photovoltage and photoreflectance study of InGaAs∕AlAsSb quantum wells

Mozume, T., Gozu, S., Ihm, Jisoon, Cheong, Hyeonsik

Year:

2011

Language:

english

File:

PDF, 733 KB

english, 2011

49

Raman scattering analysis of InGaAs/AlAsSb short-period superlattices

Nikolai Georgiev, Teruo Mozume

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 214 KB

english, 2000

50

Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

Gopal, A.V., Yoshida, H., Neogi, A., Mozume, T., Georgiev, N., Simoyama, T., Wada, O., Ishikawa, H.

Journal:

Electronics Letters

Year:

2001

Language:

english

File:

PDF, 113 KB

english, 2001

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